| PART |
Description |
Maker |
| KMM5362003 KMM5362003G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| 890-000-K0200-6000-00 901-000-00200-6000-00 801-00 |
MODUL ANZEIGE 18X24MM T5.5
MODUL SCHALTER 1P T1 3/4
MODUL SCHALTER 1P T5.5
MODUL ANZEIGE 18X18MM T5.5
MODUL ANZEIGE 18X24MM T1 3/4
1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-SOIC 150mil, T/R
MODUL ANZEIGE 18X18MM T1 3/4
MODUL SCHALTER 18X18MM SPDT T5.5
MODUL SCHALTER 18X18MM DPDT T1 3/4 模件SCHALTER 18X18MM双刀双掷T1 3 / 4
MODUL SCHALTER 18X18MM SPDT T1 3/4 模件SCHALTER 18X18MM单刀双掷T1 3 / 4
|
EAO International
TE Connectivity, Ltd.
|
| KMM5321204C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| KMM5322204C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
| KMM5324000BSWG KMM5328000BSW KMM5324000BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5322104CKUG KMM5322104CKU |
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
|
Samsung semiconductor
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| GMM7321010CNS-6 GMM7321010CNS-8 |
1M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
1M X 32 EDO DRAM MODULE, 80 ns, SMA72 SIMM-72
|
Switchcraft, Inc.
|
| KMM5321204C2W KMM5321204C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| KMM5321200C2W KMM5321200C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
